CSE

commonly memory part number for mobile and computer

2024-09-13 15:27:22

Samsung memory

2024-09-13 15:18:15

Sk hynix memory

2024-09-13 15:14:54

Micron Nand flash

2024-09-13 14:30:06

Micron Dram

2024-09-13 14:26:50

Kioxia UFS&e-MMC for commercial and industrial

            UFS 4.0 Specs Capacity Part Number UFSVersion Max DataRate(MB/s) Supply Voltage OperatingTemperature(℃) Package Size(mm) VCC(V) VCCQ(V) VCCQ2(V) 256GB THGJFJT1E45BATP 4.0 4640 2.4 to 2.7 1.14 to 1.26 - (1) -25 to 85 11.0x13.0x0.8 256GB THGJFLT1E45BATP 11.0x13.0x0.8 256GB THGJFMT1E45BATV 9.0x13.0x0.8 512GB THGJFJT2T85BAT0 11.0x13.0x0.95 512GB THGJFLT2E46BATP 11.0x13.0x0.8 512GB THGJFMT2E46BATV 9.0x13.0x0.8 1TB THGJFLT3E86BATU 11.0x13.0x1.0 1TB THGJFMT3E86BATZ 9.0x13.0x0.9                 UFS 3.1 Spec Capacity Part Number UFSVersion Max DataRate(MB/s) Supply Voltage OperatingTemperature(℃) Package Size(mm) VCC(V) VCCQ(V) VCCQ2(V) 256GB THGJFGT1E45BAIP 3.1 2320 2.4 to 2.7,2.7 to 3.6 1.14 to 1.26 - (1) -25 to 85 11.0x13.0x0.8 512GB THGJFGT2T85BAIU 11.0x13.0x1.0                   eMMC for commercial Capacity Part Number e-MMC Version Max Data Rate(MB/s) Supply Voltage Operating Temperature(℃) Package Size(mm) VCC (V) VCCQ (V) 4GB THGBMNG5D1LBAIT 5.0 400 2.7 to 3.6 1.70 to 1.95,2.7 to 3.6 -25 to 85 11.0x10.0x0.8 THGBMTG5D1LBAIL 11.5x13.0x0.8 8GB THGBMUG6C1LBAIL 5.1 16GB THGAMVG7T13BAIL 1.70 to 1.95 32GB THGAMVG8T13BAIL 64GB THGAMVG9T23BAIL 64GB THGAMSG9T24BAIL 64GB THGAMSG9T15BAIL 128GB THGAMVT0T43BAIR 11.5x13.0x1.0 128GB THGAMST0T24BAIL 11.5x13.0x0.8 128GB THGAMST0T25BAIL                 e-MMC Specs Capacity Part Number e-MMC Version Max Data Rate(MB/s) Supply Voltage Operating Temperature(℃) Package Size(mm) VCC (V) VCCQ (V) 8GB THGBMJG6C1LBAU7 5.1 400 2.7 to 3.6 1.70 to 1.95,2.7 to 3.6 -40 to 105 (1) 11.5x13.0x1.0 16GB THGBMJG7C2LBAU8 11.5x13.0x1.2 32GB THGBMJG8C4LBAU8

2024-09-13 14:16:43

KioxiaUFS and e-MMC for Auto

Auto UFS 4.0 AEC-Q100 2 级 capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature(℃) (3) Package size(mm) V CC（V） V CCQ（V） VCCQ2（V） 128GB THGJFJT0T25BAB8 4.0 4640 2.4 to 2.7 1.14 to 1.26 - (5) -40 to 105 11.5x13.0x1.2 256GB THGJFJT1T45BAB8 512GB THGJFJT2T85BAB5 11.5x13.0x1.3 AEC-Q100 3 级 capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature(℃) (4) Package size（mm） V CC（V） V CCQ（V） VCCQ2（V） 128GB THGJFJT0T25BAA8 4.0 4640 2.4 to 2.7 1.14 to 1.26 -(5) -40 to 85 11.5x13.0x1.2 256GB THGJFJT1T45BAA8 512GB THGJFJT2T85BAA5 11.5x13.0x1.3 车载UFS 3.1 / 2.1 规格 AEC-Q100 2 级 （3） capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature（°C）  （4） Package size（mm） V CC（V） V CCQ（V） VCCQ2（V） 32GB THGAFBG8T13BAB7（6） 2.1 1160 2.7 to 3.6 -  （7） 1.70 to 1.95 -40 to 105 11.5x13.0x1.0 THGAFEG8T13BAB7 64GB THGAFBG9T23BAB8（6） 11.5x13.0x1.2 THGAFEG9T23BAB8 128GB THGAFBT0T43BAB8（6） THGAFET0T43BAB8 256GB THGAFBT1T83BAB5（6） 11.5x13.0x1.3 THGAFET1T83BAB5 64GB THGJFGG9T15BAB8 3.1 2320 2.4 to 2.7,2.7 to 3.6 1.14 to 1.26 -  （8） -40 to 105 11.5x13.0x1.2 128GB THGJFGT0T25BAB8 256GB THGJFGT1T45BAB8 512GB THGJFGT2T85BAB5 11.5x13.0x1.3 AEC-Q100 3 级 capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature（°C）  （5） Package size（mm） V CC（V） V CCQ（V） VCCQ2（V） 64GB THGJFGG9T15BAA8 3.1 2320 2.4 to 2.7,2.7 to 3.6 1.14 to 1.26 -  （8） -40 to 85 11.5x13.0x1.2 128GB THGJFGT0T25BAA8 256GB THGJFGT1T45BAA8 512GB THGJFGT2T85BAA5 11.5x13.0x1.3 车载e-MMC规格 AEC-Q100 2 级 capacity P/N e-MMCVersion Max rate（MB/s） Power VCC Temperature（°C）  （4） Package size（mm） V CC（V） V CCQ（V） 8GB THGBMJG6C1LBAC7 5.1 400 2.7 to 3.6 1.70 to 1.95,2.7 to 3.6 -40 to 105 11.5x13.0x1.0 16GB THGBMJG7C2LBAC8 11.5x13.0x1.2 32GB THGBMJG8C4LBAC8 64GB THGBMJG9C8LBAC8 32GB THGAMVG8T13BAB7 1.70 to 1.95 11.5x13.0x1.0 64GB THGAMVG9T23BAB8 11.5x13.0x1.2 128GB THGAMVT0T43BAB8 256GB THGAMVT1T83BAB5 11.5x13.0x1.3 AEC-Q100 3 级 capacity P/N e-MMCVersion Max rate（MB/s） Power VCC Temperature(℃) Package size（mm） V CC（V） V CCQ（V） 32GB THGAMVG8T13BAA7 5.1 400 2.7 to 3.6 1.70 to 1.95 -40 to 85 11.5x13.0x1.0 64GB THGAMVG9T23BAA8 11.5x13.0x1.2 128GB THGAMVT0T43BAA8 256GB THGAMVT1T83BAA5 11.5x13.0x1.3

2024-09-13 14:14:27

Kioxia SLC NAND FLASH

2024-09-13 10:39:53

Kioxia XL-FLASH

  XL-FLASH Spec   Capacity P/N Tech Unit Temperature (°C) Package Production 64GB TH58LKG9DA5BA4C(132BGA)TH58LKG9DA5BA4R(154BGA) BiCS FLASH™ MLCSLC mode supported 0 to 70 132Ball BGA12x18mm154Ball BGA11.5x13.5mm Production 128GB TH58LKT0DA5BA8C(132BGA)TH58LKT0DA5BA8R(154BGA) 256GB TH58LKT1DA5BA8H(132BGA)TH58LKT1DA5BA8S(154BGA)

2024-09-13 10:35:55

2024-09-13 10:33:38

2024-09-13 10:30:06

2024-09-13 10:24:39

2024-09-13 10:20:25

DDR3/DDR3L Commercial P/N Capacity Description Package VDD,VDDQ Temperature D1216ECMDXGJD 2Gb 96 球 128Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 0°C ~ +95°C D2516ECMDXGJD 4Gb 96 球 256Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 0°C ~ +95°C D5128ECMDPGJD 4Gb 78 球 512Mx8 DDR3/3L 内存 1866Mbps 7.5x10.6x1.2 1.35V1 0°C ~ +95°C D2516ECMDXGME 4Gb 96 球 256Mx16 DDR3/3L 内存 2133Mbps 7.5x13.5x1.2 1.35V1 0°C ~ +95°C B5116ECMDXGJD 8Gb 96 球 512Mx16 DDR3/3L 内存 1866Mbps 9x13.5x1.2 1.35V1 0°C ~ +95°C DDR3/DDR3L Memory Industrial P/n Capacity Description Package VDD,VDDQ Temperature D1216ECMDXGJDI 2Gb 96 球 128Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 -40°C ~ +95°C D2568ECMDPGJDI 2Gb 78 球 256Mx8 DDR3/3L 内存 1866Mbps 7.5x10.6x1.2 1.35V1 -40°C ~ +95°C D2516ECMDXGJDI 4Gb 96 球 256Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 -40°C ~ +95°C D5128ECMDPGJDI 4Gb 78 球 512Mx8 DDR3/3L 内存 1866Mbps 7.5x10.6x1.2 1.35V1 -40°C ~ +95°C D2516ECMDXGMEI 4Gb 96 球 256Mx16 DDR3/3L 内存 2133Mbps 7.5x13.5x1.2 1.35V1 -40°C ~ +95°C B5116ECMDXGJDI 8Gb 96 球 512Mx16 DDR3/3L 内存 1866Mbps 9x13.5x1.2 1.35V1 -40°C ~ +95°C DDR3/DDR3L FBGA Automotive Temp P/N Capacity Package package VDD、VDDQ Temperature D1216ECMDXGMEY 2Gb 96 ball 128Mx16 DDR3/3L 2133Mbps 13.5x7.5x1.2 1.35V1 -40°C ~ +105°C D2516ECMDXGMEY 4Gb 96 ball 256Mx16 DDR3/3L 2133Mbps 13.5x7.5x1.2 1.35V1 -40°C ~ +105°C DDR4 光纤光栅商用温度 P/N Capacity Description Package VDD,VDDQ Temperature D5116AN9CXGRK 8Gb 96 球 FBGA DDR4 C 型温度 7.5x13x1.2 1.2V 0°C ~ +95°C D5116AN9CXGXN 8Gb 96 球 FBGA DDR4 C 型温度 7.5x13x1.2 1.2V 0°C ~ +95°C D2516ACXGXGRK 4Gb 96 球 FBGA DDR4 C 型温度 7.5x13x1.2 1.2V 0°C ~ +95°C DDR4 工业温度 P/N Capacity Description Package VDD,VDDQ Temperature D5116AN9CXGXNI 8Gb 96 球光纤光栅 DDR4 I 型温度 x16 7.5x13x1.2 1.2V -40°C ~ +95°C D1028AN9CPGXNI 8Gb 78 球光纤光栅 DDR4 I 型温度 x8 7.5x13x1.2 1.2V -40°C ~ +95°C LPDDR4 FBGA 光纤光栅商用温度 P/N Capacity Description Package VDD,VDDQ Temperature D0811PM2FDGUK 16Gb 200 球光纤光栅 LPDDR4 C 型温度 10x14.5x1.0 1.1V -25°C ~ +85°C B1621PM2FDGUK 16Gb 200 球光纤光栅 LPDDR4 C 型温度 10x14.5x1.0 1.1V -25°C ~ +85°C LPDDR4 FBGA 工业温度 P/N Capacity Description Package VDD,VDDQ Temperature D0811PM2FDGUKW 8Gb 200 球光纤光栅 LPDDR4 I 型温度 10x14.5x1.0 1.1V -40°C ~ +95°C B1621PM2FDGUKW 16Gb 200 球光纤光栅 LPDDR4 I 型温度 10x14.5x1.0 1.1V -40°C ~ +95°C

2024-09-12 15:07:44

kingston eMCP/ ePOP

   eMCP based on LPDDR3                 P/N Storage capacity Stand package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 04EM04-N3GM627 4 4 5 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 08EM08-N3GML36 8 8 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 16EM08-N3GTB29 16 8 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 16EM16-N3GTB29 16 16 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 32EM16-N3GTX29 32 16 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 32EM32-N3HTX29 32 32 5.1 LPDDR3 11.5x13.0x1.1 221 -25°C ~ +85°C 64EM32-N3HTX29 64 32 5.1 LPDDR3 11.5x13.0x1.1 221 -25°C ~ +85°C                  eMCP based on LPDDR4 P/N Capacity Stand Package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 04EM08-M4EM627 4 8 5.1 LPDDR4x 8x9.5x0.8 149 -25°C ~ +85°C 16EM16-M4CTB29 16 16 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 32EM16-M4CTX29 32 16 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 32EM32-M4DTX29 32 32 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 64EM32-M4DTX29 64 32 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 128EM32-M4DTX29 128 32 5.1 LPDDR4x 11.5x13.0x1.1 254 -25°C ~ +85°C                 ePoP based on LPDDR3 P/N Capacity Stand Package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 04EP04-N3GM627 4 4 5 LPDDR3 10x10x0.8 136 -25°C ~ +85°C 04EP08-N3GM627 4 8 5 LPDDR3 10x10x0.85 136 -25°C ~ +85°C 08EP08-N3GTC32* 8 8 5.1 LPDDR3 10x10x0.85 136 -25°C ~ +85°C 32EP08-N3GTC32 32 8 5.1 LPDDR3 10x10x0.85 136 -25°C ~ +85°C                  ePoP based on LPDDR4x P/N Capacity Stand Package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 08EP08-M4ETC32* 8 8 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 08CP08-M4ETC32* 8 8 5.1 LPDDR4x 8x9.5x0.85 144 -25°C ~ +85°C 16EP08-M4ETC32 16 8 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 32EP08-M4ETC32 32 8 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 16EP16-M4FTC32 16 16 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 32EP16-M4FTC32 32 16 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 32CP16-M4FTC32 32 16 5.1 LPDDR4x 8x9.5x0.85 144 -25°C ~ +85°C

2024-09-12 15:03:18

What are the common production processes for other interfaces?

2024-12-13 18:16:08

What are the common production processes for gate drivers?

A gate driver is a circuit used to drive a field effect transistor (FET). It can control the on and off states of the FET, thereby controlling the circuit. Gate drivers are widely used in many electronic devices, such as power amplifiers, switching power supplies, motor drivers, etc. When producing gate drivers, a series of process flows are required to ensure the quality and performance of the product. The production process of gate drivers usually includes the following steps: 1. Design and verification: Before the gate driver is produced, circuit design and verification are required. The designer designs a circuit structure that meets the requirements based on the functional requirements and performance indicators of the product. Then, through simulation and verification, it is ensured that the designed circuit can work properly and meet the performance requirements. 2. Raw material procurement: The production of gate drivers requires the use of various raw materials and components, such as resistors, capacitors, transistors, etc. Manufacturers need to purchase appropriate raw materials according to design requirements and ensure their quality and reliability. 3. PCB design and manufacturing: The gate driver circuit is usually integrated on a PCB board, so PCB design and manufacturing are required. The designer designs the PCB board according to the circuit layout requirements, and then sends the design files to the PCB manufacturer for production. 4. Component welding: Solder various components on the PCB board, including resistors, capacitors, transistors, etc. The welding process requires precise operation and high-quality welding technology to ensure that the connection between the components and the PCB board is firm and reliable. 5. Assembly and testing: Assemble the soldered PCB board and other components to form a complete gate driver product. Then perform functional testing and performance testing to ensure that the product meets the design requirements and can work properly. 6. Quality control and packaging: Strict quality control is required during the production process to ensure the quality of the product is stable and reliable. Finally, the product is packaged for transportation and sales. In general, the production process of gate drivers needs to go through multiple links, including design, raw material procurement, PCB design and manufacturing, component welding, assembly and testing, quality control and packaging. Only by strictly following the process flow can high-quality gate driver products be produced to meet customer needs and requirements.A gate driver is a circuit used to drive a field effect transistor (FET). It can control the on and off states of the FET, thereby controlling the circuit. Gate drivers are widely used in many electronic devices, such as power amplifiers, switching power supplies, motor drivers, etc. When producing gate drivers, a series of process flows are required to ensure the quality and performance of the product. The production process of gate drivers usually includes the following steps: 1. Design and verification: Before the gate driver is produced, circuit design and verification are required. The designer designs a circuit structure that meets the requirements based on the functional requirements and performance indicators of the product. Then, through simulation and verification, it is ensured that the designed circuit can work properly and meet the performance requirements. 2. Raw material procurement: The production of gate drivers requires the use of various raw materials and components, such as resistors, capacitors, transistors, etc. Manufacturers need to purchase appropriate raw materials according to design requirements and ensure their quality and reliability. 3. PCB design and manufacturing: The gate driver circuit is usually integrated on a PCB board, so PCB design and manufacturing are required. The designer designs the PCB board according to the circuit layout requirements, and then sends the design files to the PCB manufacturer for production. 4. Component welding: Solder various components on the PCB board, including resistors, capacitors, transistors, etc. The welding process requires precise operation and high-quality welding technology to ensure that the connection between the components and the PCB board is firm and reliable. 5. Assembly and testing: Assemble the soldered PCB board and other components to form a complete gate driver product. Then perform functional testing and performance testing to ensure that the product meets the design requirements and can work properly. 6. Quality control and packaging: Strict quality control is required during the production process to ensure the quality of the product is stable and reliable. Finally, the product is packaged for transportation and sales. In general, the production process of gate drivers needs to go through multiple links, including design, raw material procurement, PCB design and manufacturing, component welding, assembly and testing, quality control and packaging. Only by strictly following the process flow can high-quality gate driver products be produced to meet customer needs and requirements.

2024-12-13 11:50:36

When will the new Ethernet chip be released?

2024-12-06 18:56:41

What important industry-related patents does the voice recording and playback chip contain?

2024-12-04 18:14:12

Renesas Audio & Video

2024-09-18 15:45:51